*
–3.4 A,
–30 V RDS(ON) = 130 mΩ @ VGS =
–10 V RDS(ON) = 200 mΩ @ VGS =
–4.5 V
* Low gate charge .
requiring a wide range of gave drive voltage ratings (4.5V
– 25V).
Features
*
–3.4 .
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V
– 25V).
Feat.
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